US Patent Issued to STMicroelectronics on Jan. 20 for "Circuit arrangement comprising a MOS sensor, in particular TMOS sensor, and a corresponding method for operating the circuit arrangement" (Italian Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,570, issued on Jan. 20, was assigned to STMicroelectronics S.r.l. (Agrate Brianza, Italy).

"Circuit arrangement comprising a MOS sensor, in particular TMOS sensor, and a corresponding method for operating the circuit arrangement" was invented by Calogero Marco Ippolito (Aci Castello, Italy) and Michele Vaiana (San Giovanni La Punta, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A differential pair of FETs forms a sensor circuit coupled to a differential current reading circuit that includes a current to voltage converter and an analog to digital converter. An ESD protection circuit interposed between the sensor circuit and the differential cu...