US Patent Issued to STMicroelectronics International on March 31 for "Circuit and method for reducing driving losses in GAN switches" (Italian Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,592,640, issued on March 31, was assigned to STMicroelectronics International N.V. (Geneva).

"Circuit and method for reducing driving losses in GAN switches" was invented by Sebastiano Messina (Mascalucia, Italy), Salvatore Mita (Canicattini Bagni, Italy) and Natale Aiello (Trecastagni, Italy).

According to the abstract* released by the U.S. Patent & Trademark Office: "A half bridge circuit includes two GaN high electron mobility transistors (HEMT). A driver circuit generates a high side and low side driver signals corresponding to square wave. A driver deadtime is the period between during which both driver signals are low. A half bridge adjustment circuit is coupled between the dr...