US Patent Issued to STMicroelectronics International on March 24 for "Built-in self test circuit for segmented static random access memory (SRAM) array input/output" (Indian Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,584,961, issued on March 24, was assigned to STMicroelectronics International N.V. (Geneva).

"Built-in self test circuit for segmented static random access memory (SRAM) array input/output" was invented by Bhupender Singh (New Delhi), Hitesh Chawla (Noida, India), Tanuj Kumar (Noida, India), Harsh Rawat (Faridabad, India), Kedar Janardan Dhori (Ghaziabad, India), Manuj Ayodhyawasi (Noida, India), Nitin Chawla (Noida, India) and Promod Kumar (Greater Noida, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "An array of a memory includes sub-arrays with memory cells arranged in a row-column matrix where each row includes a word line and each sub-array ...