US Patent Issued to STMicroelectronics International on June 16 for "Wafer level proximity sensor and method of making same" (French Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,655,017, issued on June 16, was assigned to STMicroelectronics International N.V. (Geneva).

"Wafer level proximity sensor and method of making same" was invented by Eric Saugier (Froges, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer to form a bonded wafer sandwich, and then selectively thinning the silicon substrate wafer and silicon cap wafer. The silicon substrate wafer is thinned first, and an interconnect structure of through-silicon vias is formed within the thinned silicon substra...