ALEXANDRIA, Va., June 16 -- United States Patent no. 12,659,623, issued on June 16, was assigned to STMicroelectronics International N.V. (Geneva).
"Avalanche photodiode pixel" was invented by Raffaele Bianchini (Grenoble, France), Raul Andres Bianchi (Myans, France) and Mohammed Al-Rawhani (Glasgow, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an avalanche photodiode pixel including: a transistor adapted to be controlled by an enable signal having a first state for controlling the enabling of the pixel and a second state for controlling the disabling of the pixel, the transistor being configured to couple an avalanche photodiode of the pixel to a node of app...