ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,718, issued on Dec. 16, was assigned to STMicroelectronics France (Montrouge, France).

"Electrostatic discharge protection device" was invented by Philippe Galy (Le Touvet, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge protection device is formed using only electrically connected transistors. The transistors include: a first MOS-type transistor forming a clamping circuit coupled between first and second supply nodes; a second MOS-type transistor coupled between the first supply node and a gate terminal of the first MOS-type transistor; and a third MOS-type transistor having a first gate terminal coupled to a gate t...