US Patent Issued to STMICROELECTRONICS (ROUSSET) on June 23 for "Bit-erasable embedded select in trench memory (ESTM)" (French Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,613, issued on June 23, was assigned to STMICROELECTRONICS (ROUSSET) SAS (Rousset, France).

"Bit-erasable embedded select in trench memory (ESTM)" was invented by Franck Melul (Aubagne, France), Abderrezak Marzaki (Cabries, France) and Madjid Akbal (Trets, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment a memory cell includes a first doped well of a first conductivity type embedded in a second doped well of a second conductivity type, the second conductivity type being opposite to the first conductivity type, a third doped well of the second conductivity type embedded in a fourth doped well of the first conductivity type, a fi...