US Patent Issued to STMicroelectronics (Research & Development) on Dec. 2 for "Active recharge quenching circuit for negative bias SPAD" (British Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,532, issued on Dec. 2, was assigned to STMicroelectronics (Research & Development) Ltd. (Marlow, Great Britain).

"Active recharge quenching circuit for negative bias SPAD" was invented by Mohammed Al-Rawhani (Glasgow, Great Britain) and Bruce Rae (Edinburgh, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a single photon avalanche diode (SPAD) pixel for use in time-of-flight imaging. This pixel includes a SPAD having a cathode connected to a first node and an anode coupled to first negative voltage. A transistor circuit in the pixel includes a quench transistor connected between a supply voltage node and a second node...