US Patent Issued to SPTS Technologies on Sept. 9 for "Post-processing of indium-containing compound semiconductors" (British Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,747, issued on Sept. 9, was assigned to SPTS Technologies Ltd. (Newport, Great Britain).

"Post-processing of indium-containing compound semiconductors" was invented by Weikang Fan (Newport, Great Britain) and Adam S. Beachey (Newport, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of plasma etching an indium-containing compound semiconductor substrate and plasma etch apparatus for plasma etching an indium-containing semiconductor substrate can use a primary plasma etching process and a secondary plasma etching process. The primary plasma etching process uses a halogen-containing component and a nitrogen-containing component. ...