US Patent Issued to SPTS Technologies on June 23 for "Deposition of thick layers of silicon dioxide" (British Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,888, issued on June 23, was assigned to SPTS Technologies Ltd. (Newport, Great Britain).

"Deposition of thick layers of silicon dioxide" was invented by Matt Edmonds (Newport, Great Britain), William Royle (Newport, Great Britain), Caitlin Lane Jones (Newport, Great Britain), Daniel Gomez-Sanchez (Newport, Great Britain) and Kathrine Crook (Newport, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "Silicon dioxide can be deposited onto a substrate by plasma enhanced chemical vapour deposition (PECVD). The substrate includes at least one silicon dioxide layer deposited thereon. A plasma enhanced chemical vapour deposition apparatus can be ...