ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,081, issued on Dec. 16, was assigned to SPTS Technologies Ltd. (Newport, Great Britain).
"Method of deposition" was invented by Tristan Harper (Newport, Great Britain) and Kathrine Crook (Newport, Great Britain).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to the present invention there is provided a method of depositing a hydrogenated silicon carbon nitride (SiCN:H) film onto a substrate by plasma enhanced chemical vapour deposition (PECVD) comprising the steps of: providing the substrate in a chamber; introducing silane (SiH4), a hydrocarbon gas or vapour, nitrogen gas (N2), and hydrogen gas (H2) into the chamber; and sustaining a plasm...