US Patent Issued to SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY on March 17 for "P-type gate HEMT device" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,683, issued on March 17, was assigned to SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Shenzhen, China).

"P-type gate HEMT device" was invented by Mengyuan Hua (Shenzhen, China) and Junting Chen (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A P-type gate HEMT device includes a substrate, a buffer layer, a channel layer, and a barrier layer sequentially arranged from bottom to top. A first P-type material layer is arranged on the barrier layer. A first source and a first drain are respectively arranged on two sides of the first P-type material layer. A first conductive layer is arranged on the first P-type material layer. A second...