US Patent Issued to SOUTHEAST UNIVERSITY, CSMC TECHNOLOGIES FAB2 on Feb. 10 for "IGZO thin-film transistor and method for manufacturing same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,378, issued on Feb. 10, was assigned to SOUTHEAST UNIVERSITY (Jiangsu, China) and CSMC TECHNOLOGIES FAB2 Co. LTD. (Wuxi, China).

"IGZO thin-film transistor and method for manufacturing same" was invented by Wangran Wu (Wuxi, China), Guangan Yang (Wuxi, China), Feng Lin (Wuxi, China), Guipeng Sun (Wuxi, China), Yaohui Wang (Wuxi, China), Weifeng Sun (Wuxi, China) and Longxing Shi (Wuxi, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An IGZO thin-film transistor and a method for manufacturing same. The method includes: acquiring a substrate; forming an IGZO layer on the substrate by a solution process; doping V impurities on a surface of the IGZ...