US Patent Issued to SOUTH CHINA UNIVERSITY OF TECHNOLOGY on Dec. 2 for "Preparation method for growing germanium sulfide (GeS 2 ) single-crystal thin film on SiO 2 substrate" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,542, issued on Dec. 2, was assigned to SOUTH CHINA UNIVERSITY OF TECHNOLOGY (Guangzhou, China).

"Preparation method for growing germanium sulfide (GeS 2 ) single-crystal thin film on SiO 2 substrate" was invented by Guoqiang Li (Guangzhou, China), Sheng Chen (Guangzhou, China), Wenliang Wang (Guangzhou, China) and Jixing Chai (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A preparation method for growing a germanium sulfide (GeS2) single-crystal thin film on a SiO2 substrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si/SiO2 substrate or a SiO2 glass substrate; pho...