US Patent Issued to Soochow University on June 23 for "Field-effect transistor device with equivalent source and drain region optimization" (Chinese Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,669, issued on June 23, was assigned to Soochow University (Suzhou City, China).

"Field-effect transistor device with equivalent source and drain region optimization" was invented by Mingxiang Wang (Suzhou City, China), Yeye Guo (Suzhou City, China), Lekai Chen (Suzhou City, China), Dongli Zhang (Suzhou City, China) and Huaisheng Wang (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention discloses an equivalent source and drain region optimized field-effect transistor device for solving the problem of short-channel effects of a field-effect transistor in the prior art. The field-effect transistor device includes an...