US Patent Issued to Sony Semiconductor Solutions on July 14 for "Solid state image sensor and method of manufacturing solid state image sensor" (Japanese Inventor)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,684,879, issued on July 14, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan).

"Solid state image sensor and method of manufacturing solid state image sensor" was invented by Shigeru Kanematsu (Kangawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A solid state image sensor according to an embodiment includes a transfer gate, a floating diffusion portion that converts signal charge transferred from a photodiode via the transfer gate into a voltage signal, and an extraction electrode that is formed of a film of conductive material including any of amorphous silicon, monocrystalline silicon, or N+ polysilicon, that has a periphe...