ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,958, issued on Dec. 30, was assigned to Sony Group Corp. (Tokyo).
"Nanowire transistor fabrication with hardmask layers" was invented by Seung Hoon Sung (Portland, Ore.), Seiyon Kim (Portland, Ore.), Kelin J. Kuhn (Aloha, Ore.), Willy Rachmady (Beaverton, Ore.) and Jack T. Kavalieros (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nanowire device of the present description may be produced with the incorporation of at least one hardmask during the fabrication of at least one nanowire transistor in order to assist in protecting an uppermost channel nanowire from damage that may result from fabrication processes, such as those used in ...