US Patent Issued to Soitec on Sept. 22 for "Heterostructure and method of fabrication" (French Inventors)

ALEXANDRIA, Va., Sept. 24 -- United States Patent no. 12,744,508, issued on Sept. 22, was assigned to Soitec (Bernin, France).

"Heterostructure and method of fabrication" was invented by Arnaud Castex (Grenoble, France), Daniel Delprat (Crolles, France), Bernard Aspar (Saint-Ismier, France) and Ionut Radu (Crolles, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal ...