US Patent Issued to Soitec on March 17 for "Method for forming a high resistivity handle support for composite substrate" (French Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,922, issued on March 17, was assigned to Soitec (Bernin, France).

"Method for forming a high resistivity handle support for composite substrate" was invented by Young-Pil Kim (Grenoble, France), Isabelle Bertrand (Bernin, France) and Christelle Veytizou (Bernin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a high resistivity handle substrate for a composite substrate comprises: providing a base substrate made of silicon; exposing the base substrate to a carbon single precursor at a pressure below atmospheric pressure to form a polycrystalline silicon carbide layer having a thickness of at least 10 nm on the surface of ...