US Patent Issued to Soitec on Jan. 20 for "Method for manufacturing a SeOI integrated circuit chip" (Canadian, American, French Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,539, issued on Jan. 20, was assigned to Soitec (Bernin, France).

"Method for manufacturing a SeOI integrated circuit chip" was invented by Trong Huynh-Bao (Ottawa), Bich-Yen Nguyen (Austin, Texas) and Christophe Maleville (Lumbin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor-on-insulator (SeOI) chip comprises: a) providing a SeOI structure, b) building a plurality of isolated field effect transistors (FET) each comprising: -a preliminary gate above a channel region, the FETs from a first group having a first preliminary gate length and the FETs from a second group having a smaller second preliminar...