US Patent Issued to Soitec on Feb. 17 for "Detachment chamber for detaching a piezoelectric layer from a donor substrate" (French Inventor)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,553, issued on Feb. 17, was assigned to Soitec (Bernin, France).

"Detachment chamber for detaching a piezoelectric layer from a donor substrate" was invented by Cedric Charles-Alfred (Grenoble, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A detachment chamber for detaching a piezoelectric layer from a piezoelectric donor substrate includes at least one chuck having at least one electrode configured to apply an electric field to the piezoelectric donor substrate to detach the piezoelectric layer from the piezoelectric donor substrate."

The patent was filed on July 18, 2023, under Application No. 18/353,980.

*For further information, includ...