US Patent Issued to Soitec on Aug. 11 for "Method for manufacturing a composite structure comprising a thin film of monocrystalline SIC on a carrier substrate of polycrystalline SIC" (French Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,703,929, issued on Aug. 11, was assigned to Soitec (Bernin, France).

"Method for manufacturing a composite structure comprising a thin film of monocrystalline SIC on a carrier substrate of polycrystalline SIC" was invented by Frederic Allibert (Bernin, France) and Eric Guiot (Bernin, France).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a composite structure includes providing a c-SiC initial substrate, depositing a relatively thin p-SiC first layer on a front side of the initial substrate at a relatively high temperature, the first layer having a dopant concentration greater than 1019/cm3, forming a buried brittle plane in the i...