US Patent Issued to Socionext on Feb. 3 for "Semiconductor device and semiconductor device manufacturing method" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,353, issued on Feb. 3, was assigned to Socionext Inc. (Kanagawa, Japan).

"Semiconductor device and semiconductor device manufacturing method" was invented by Haruhiko Serizawa (Yokohama, Japan) and Tatsuo Chijimatsu (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes, above a substrate, a first layer with, on both sides in a direction, first regions; a second layer above the first layer with, on both sides in the direction, second regions above the first regions; a third layer, third regions, a fourth layer, and fourth regions, corresponding to the first layer, first regions, second layer, and second region...