US Patent Issued to SMARTER MICROELECTRONICS (SHANGHAI) on Sept. 1 for "RF power amplifiers and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,726,156, issued on Sept. 1, was assigned to SMARTER MICROELECTRONICS (SHANGHAI) Co. LTD. (Shanghai).

"RF power amplifiers and electronic device" was invented by Chen Chen (Shanghai), Yiwei Hou (Shanghai) and Zhenfei Peng (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A radio frequency power amplifier includes a main amplifier, a main matching circuit, an auxiliary amplifier, an auxiliary matching circuit and an impedance conversion circuit. The main amplifier is configured to output a first amplified signal. The main matching circuit is connected between the main amplifier and a combining node, including at least one-stage impedance matching c...