ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,036, issued on Dec. 2, was assigned to Skyworks Solutions Inc. (Irvine, Calif.).

"Field-effect transistors with interleaved finger configuration" was invented by Hailing Wang (Acton, Mass.), Dylan Charles Bartle (Arlington, Mass.), Hanching Fuh (Allston, Mass.), David Scott Whitefield (Andover, Mass.) and Paul T. DiCarlo (Marlborough, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The fabrication of field-effect transistor (FET) devices is described herein where the FET devices include one or more body contacts implemented between source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G...