US Patent Issued to Skyworks Solutions on Aug. 25 for "Wide bandgap transistor layout with unequal gate electrode finger widths" (Massachusetts Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,842, issued on Aug. 25, was assigned to Skyworks Solutions Inc. (Irvine, Calif.).

"Wide bandgap transistor layout with unequal gate electrode finger widths" was invented by Guillaume Alexandre Blin (Carlisle, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor comprising a first drain region, a first source region disposed on a first side of the first drain region, a first active region being formed between the first drain region and the first source region, a second source region disposed on a second side of the first drain region opposite the first side, a second active region being formed between the first drain region and the secon...