US Patent Issued to Skyworks Solutions on April 7 for "Wide bandgap transistor layout with staggered gate electrode fingers and split active regions" (Massachusetts Inventors)

ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,800, issued on April 7, was assigned to Skyworks Solutions Inc. (Irvine, Calif.).

"Wide bandgap transistor layout with staggered gate electrode fingers and split active regions" was invented by Guillaume Alexandre Blin (Carlisle, Mass.) and Yu Zhu (Wellesley, Mass.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor comprising a first drain region split into first and second drain sub-regions aligned lengthwise and separated by a first low conductivity region, a first source region disposed on a first side of the first drain region split into first and second source sub-regions aligned lengthwise and separated by a second low conductivity re...