US Patent Issued to Skyworks Solution on March 31 for "Semiconductor devices with Schottky barriers" (California Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,491, issued on March 31, was assigned to Skyworks Solution Inc. (Irvine, Calif.).

"Semiconductor devices with Schottky barriers" was invented by Yun Shi (San Diego) and John Tzung-Yin Lee (Costa Mesa, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Circuits, systems, devices, and methods related to transistors with Schottky barriers are discussed herein. For example, a method of fabricating a transistor can include forming a p-well or an n-well in a substrate and forming a gate for the transistor. The method can also include doping a region within the p-well or n-well with a concentration below a threshold and forming a conductor layer on the...