US Patent Issued to SK keyfoundry on Aug. 25 for "High voltage semiconductor device having Schottky barrier diode" (South Korean Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,850, issued on Aug. 25, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea).

"High voltage semiconductor device having Schottky barrier diode" was invented by Tae Hoon Lee (Cheongju-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a device region, including a source contact, a drain contact formed on a substrate, and a gate contact formed between the source contact and the drain contact; an isolation region surrounding the device region, the isolation region including an N-type semiconductor region formed on the substrate, a first silicide layer and a second silicide layer formed in the N-type ...