US Patent Issued to SK hynix on Sept. 8 for "Memory device and operating method for sneak current measurement and data recovery" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,730,565, issued on Sept. 8, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and operating method for sneak current measurement and data recovery" was invented by Seung Yun Lee (Icheon-si, South Korea) and Tae Young Moon (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device may include a memory cell array in which a plurality of decks are stacked, a control circuit configured to perform a read or write operation on a target deck of the plurality of decks, a current detection circuit configured to measure a sneak current flowing through at least one deck among the plurality of decks, the at least one...