US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,538, issued on Sept. 29, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of operating the memory device" was invented by Jae Woong Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a plurality of memory cells, a peripheral circuit configured to perform a read operation of reading data from memory cells connected to a selected word line, and a read operation controller configured to apply a plurality of read voltages to the selected word line, apply a first pass voltage to unselected word lines while first read voltages for determining a program state of memory cell...