US Patent Issued to SK hynix on Sept. 29 for "Memory device and method of operating the memory device" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,534, issued on Sept. 29, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of operating the memory device" was invented by Moon Sik Seo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein is a memory device and a method of operating the memory device. The memory device includes a string connected between a bit line and a source line, wherein the string includes one or more memory cells, a drain select transistor connected between the one or more memory cells and the bit line, and first and second source select transistors and a buffer source select transistor connected between the o...