US Patent Issued to SK hynix on Sept. 15 for "Memory device and method with two refresh cycles" (South Korean Inventor)

ALEXANDRIA, Va., Sept. 15 -- United States Patent no. 12,738,310, issued on Sept. 15, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory device and method with two refresh cycles" was invented by Saeng Hwan Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell array including row-hammer cells configured to store a number of accesses of a corresponding row of a plurality of rows; an address control circuit configured to generate consecutive first and second refresh addresses according to a normal refresh command, wherein the first refresh address indicates an odd-numbered row during a first refresh cycle and an even-numbered row duri...