US Patent Issued to SK hynix on Oct. 27 for "Memory device including interface between conductive layers" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,644, issued on Oct. 27, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device including interface between conductive layers" was invented by Dae Sung Eom (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein is a memory device and a method of manufacturing the memory device. The memory device includes a first conductive layer extending in a first direction, a second conductive layer extending from the first conductive layer in a second direction intersecting the first direction, a plurality of first channel structures penetrating the first conductive layer and disposed to be spaced apart from each ot...