ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,770,698, issued on Oct. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device performing program operation and method of operating the same" was invented by Hee Youl Lee (Icheon-si Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device according to the present technology includes a memory cell, a page buffer including a plurality of latches storing a result of comparing a threshold voltage of the memory cell with a pre-verify voltage and a main verify voltage, and, a program operation control circuit configured to control the page buffer to apply a first program control voltage to a bit line connecte...