ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,769,475, issued on Oct. 20, was assigned to SK hynix Inc. (Icheon-si, South Korea).
"Memory device" was invented by Su Jeong Oh (Icheon-si, South Korea), Sung Ho Bae (Icheon-si, South Korea), Je Bock Chung (Icheon-si, South Korea) and Beom Seok Hah (Icheon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes memory cells and a control unit. The memory cells are coupled in series between one or more first selection transistors coupled in series to a source line and one or more second selection transistors coupled in series to a bit line. The control unit is configured to apply, during a forcing period that is part of a ...