US Patent Issued to SK hynix on Oct. 14 for "Resistive memory device and method of operating the resistive memory device" (South Korean Inventor)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,464, issued on Oct. 14, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Resistive memory device and method of operating the resistive memory device" was invented by In Ku Kang (Icheon-si Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided herein may be a resistive memory device and a method of operating the resistive memory device. The resistive memory device may include strings coupled between one or more source lines and one or more bit lines, each string including a set of one or more resistive memory cells, one or more word lines respectively coupled to the set of one or more resistive memory cells; and a vo...