ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,346, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device and method for fabricating the same" was invented by Young Gwang Yoon (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present invention are to provide a semiconductor device and a method for fabricating the same and, more particularly, to a semiconductor device including isolation layers including an air gap, thereby minimizing stress to a substrate caused by oxide and improving performance of a device, and a method for fabricating the same. The semiconductor device according to the embodiment of t...