US Patent Issued to SK hynix on Nov. 3 for "Memory device and method of operating the same using multi-level pass voltages during a program operation" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,844, issued on Nov. 3, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of operating the same using multi-level pass voltages during a program operation" was invented by Han Soo Joo (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment of the present disclosure, a memory device, a peripheral circuit configured to perform a program operation, including a plurality of program loops, and a control logic configured to, in some of the plurality of loops of the program operation, control the peripheral circuit to apply a program voltage to a selected word line, apply a first pass ...