ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,570, issued on Nov. 11, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Memory device and method of operating the same" was invented by Chan Hui Jeong (Gyeonggi-do, South Korea), Dong Hun Kwak (Gyeonggi-do, South Korea) and Se Chun Park (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present technology relates to an electronic device. According to the present technology, a memory device may include a plurality of memory cells, a peripheral circuit, and a control logic. The peripheral circuit may perform a fail bit detection operation on memory cells selected from among the plurality of memory cells. The contro...