US Patent Issued to SK hynix on May 26 for "Memory device" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,640,204, issued on May 26, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device" was invented by Chan Hui Jeong (Icheon-si, South Korea) and Hyung Jin Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a control signal generation circuit configured to generate a control signal at a voltage level corresponding to a current temperature in each operation period, among a plurality of operation periods, of a program operation, and a bit line control circuit configured to charge a bit line in response to the control signal."

The patent was filed on Sept. 29, 2023, under Application No. 18/478...