ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,567, issued on May 13, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Three-dimensional memory device and manufacturing method thereof" was invented by Sung Lae Oh (Icheon-si, South Korea), Sang Hyun Sung (Icheon-si, South Korea) and Hyun Soo Shin (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device and a manufacturing method thereof. The three-dimensional memory device includes an electrode structure including a plurality of electrode layers and a plurality of interlayer dielectric layers which are alternately stacked on a substrate; and a plurality of through holes passing through the e...