US Patent Issued to SK hynix on May 13 for "Memory cell and semiconductor memory device with the same" (South Korean Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,552, issued on May 13, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).

"Memory cell and semiconductor memory device with the same" was invented by Seung Hwan Kim (Gyeonggi-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a highly integrated memory cell and a semiconductor memory device including the same. According to the present invention, a semiconductor memory device comprises: a substrate; an active layer spaced apart from the substrate, extending in a direction parallel to the substrate, and including a thin-body channel; a bit line extending in a direction vertical to the substrate and con...