US Patent Issued to SK hynix on May 12 for "Semiconductor device including channel layers and method of manufacturing the semiconductor device" (South Korean Inventor)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,341, issued on May 12, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including channel layers and method of manufacturing the semiconductor device" was invented by Kang Sik Choi (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including: a stack including first conductive layers and insulating layers that are alternately stacked; second conductive layers disposed on the stack; a separation insulating structure disposed on the stack and configured to insulate the second conductive layers from each other; first channel layers passing through the stack; memory layers enclosing ...