ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,634, issued on March 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea).
"Semiconductor device including capacitor and method for fabricating the same" was invented by Jung Wook Woo (Gyeonggi-do, South Korea), Sei Yon Kim (Gyeonggi-do, South Korea), Min Chul Sung (Gyeonggi-do, South Korea), Yeon Gyu Lee (Gyeonggi-do, South Korea), Do Hee Kim (Gyeonggi-do, South Korea) and Ja Yong Kim (Gyeonggi-do, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes: forming a first oxide layer containing a first element over a first electrode layer; forming a second oxide layer containing a sec...