US Patent Issued to SK hynix on March 24 for "Semiconductor memory device with decreased parasitic capacitance" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,203, issued on March 24, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor memory device with decreased parasitic capacitance" was invented by Won Geun Choi (Icheon-si, South Korea), Mi Seong Park (Icheon-si, South Korea) and Jung Shik Jang (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is provided. The semiconductor memory device includes a gate stacked structure including conductive layers, each of the conductive layers extending in a first direction and a second direction and including a top surface facing a third direction, wherein the conductive layers are stacked to be...