US Patent Issued to SK hynix on March 24 for "Semiconductor device including channel structures and a slit structure" (South Korean Inventors)

ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,207, issued on March 24, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including channel structures and a slit structure" was invented by Sung Wook Jung (Icheon-si, South Korea), Jong Hun Kim (Icheon-si, South Korea), Byung Soo Park (Icheon-si, South Korea), Sang Bum Lee (Icheon-si, South Korea) and Song Hee Han (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure including a cell region and a contact region, a slit structure configured to extend in a first direction through the gate structure, first channel structures disposed in the cell region of t...