US Patent Issued to SK hynix on March 17 for "Ferroelectric memory with multiple ferroelectric layers through a stack of gate lines" (South Korean Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,658, issued on March 17, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Ferroelectric memory with multiple ferroelectric layers through a stack of gate lines" was invented by Sung Hyun Yoon (Icheon-si, South Korea) and Dae Hyun Kim (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes interlayer insulating layers and gate lines alternately stacked, a data storage layer vertically passing through the interlayer insulating layers and the gate lines and having a cylindrical shape, and a channel layer formed in an area enclosed by the data storage layer. The data storage layer includes a...