ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,803, issued on June 9, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Memory device and method of manufacturing the same" was invented by Nam Jae Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, and a method of manufacturing the memory device, includes first and second vertical structures spaced apart from each other and a connection structure contacting bottoms of the first and second vertical structures. The memory device also includes a first gate layer disposed between the first and second vertical structures and a second gate layer enclosing the first and second vertical structures and the con...