US Patent Issued to SK hynix on June 30 for "Three-dimensional semiconductor device and method of manufacturing the three-dimensional semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,672,283, issued on June 30, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Three-dimensional semiconductor device and method of manufacturing the three-dimensional semiconductor device" was invented by Seung Min Lee (Icheon-si, South Korea) and Jung Ryul Ahn (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A 3D semiconductor device may include a stack structure and a vertical channel structure. The stack structure may include a first insulation pattern, a lower conductive pattern and a second insulation pattern. The lower conductive pattern may be arranged on the first insulation pattern. The second insulation pattern may...